The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Jul. 08, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsin-Li Cheng, Hsin Chu, TW;
Jyun-Ying Lin, Wujie Township, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Shih-Fen Huang, Jhubei, TW;
Shu-Hui Su, Tucheng, TW;
Ting-Chen Hsu, Taichung, TW;
Tuo-Hsin Chien, Zhubei, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
Shi-Min Wu, Changhua County, TW;
Yu-Chi Chang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a substrate comprising sidewalls that define a trench. A capacitor comprising a plurality of conductive layers and a plurality of dielectric layers that define a trench segment is disposed within the trench. A width of the trench segment continuously increases from a front-side surface of the substrate in a direction towards a bottom surface of the trench.