The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jan. 07, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Ting Wang, Round Rock, TX (US);
Alan Roth, Leander, TX (US);
Eric Soenen, Austin, TX (US);
Alexander Kalnitsky, San Francisco, CA (US);
Liang-Tai Kuo, Zhudong Township, Hsinchu County, TW;
Hsin-Li Cheng, Hsin Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Voltage reference circuits are provided. A voltage reference circuit includes a transistor, a flipped-gate transistor, a first current mirror unit, a second current mirror unit and an output node. The gate and the drain of the flipped-gate transistor are coupled to the gate and the drain of the transistor. The first current mirror unit is configured to provide a first current to the flipped-gate transistor and the mirroring current in response to a bias current. The second current mirror unit is configured to drain a second current from the transistor in response to the mirroring current. The output node is coupled to the source of the transistor and the second current mirror unit, and is configured to output a reference voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile