Hsiao-Shu Chao

This inventor holds 32 USPTO granted patents, primarily in RC Extraction Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Shu Chao. Retrieved from https://idiyas.com/inventor/hsiao-shu-chao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32

% Patents Active = 34.4

Average Co-Inventor Count = 4.7

ph-index = 11

Forward Citations = 1,130(Granted Patents)

Location History:

Taipei, TW (2011 - 2012)
Boashan Township, TW (2012)
Baoshan Township, Hsinchu County, TW (2013)
Baoshan, TW (2013 - 2014)
Baoshan Township, TW (2012 - 2016)
Baoshan Townhship, TW (2016)
Hsin-Chu County, TW (2017)

Company Filing History:

32 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2011-2017

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Areas of Expertise:

Circuit Migration

Double Patterning Technology

RC Extraction

Parasitic Capacitance

FinFETs

Semiconductor Device Design

Frequency-Dependent Netlist

Layout Design

Multi-Patterning

DFM

Photomask Assignment

Chip-Level ECO

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9672315 - Optimization for circuit migration (2017-06-06),

2. 9361423 - RC corner solutions for double patterning technology (2016-06-07),

3. 9275186 - Optimization for circuit migration (2016-03-01),

4. 9262558 - RC extraction for single patterning spacer technique (2016-02-16),

5. 9230052 - Method of generating a simulation model of a predefined fabrication process (2016-01-05),

6. 9081933 - Methods and apparatus for RC extraction (2015-07-14),

7. 9021412 - RC extraction methodology for floating silicon substrate with TSV (2015-04-28),

8. 8887106 - Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process (2014-11-11),

9. 8826213 - Parasitic capacitance extraction for FinFETs (2014-09-02),

10. 8793640 - Methods and apparatus for RC extraction (2014-07-29),

11. 8775977 - Decomposition and marking of semiconductor device design layout in double patterning lithography (2014-07-08),

12. 8751975 - RC corner solutions for double patterning technology (2014-06-10),

13. 8732628 - Method and system for photomask assignment for double patterning technology (2014-05-20),

14. 8726212 - Streamlined parasitic modeling with common device profile (2014-05-13),

15. 8707245 - Semiconductor device design method, system and computer-readable medium (2014-04-22),

Title: The Inventor Profile of Hsiao-Shu Chao

Introduction: Hsiao-Shu Chao is a distinguished inventor hailing from Baoshan, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hsiao-Shu Chao holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his versatility and ingenuity in inventing cutting-edge solutions.

Career Highlights: With a career spanning over two decades, Hsiao-Shu Chao has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Hsiao-Shu Chao has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange that has led to remarkable advancements in technology.

Conclusion: Hsiao-Shu Chao's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a visionary inventor whose work continues to shape the future of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]