The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Apr. 30, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chia-Ming Ho, Hsin-Chu, TW;
Ke-Ying Su, Taipei, TW;
Hsiao-Shu Chao, Baoshan Township, TW;
Yi-Kan Cheng, Taipei, TW;
Ze-Ming Wu, Tainan, TW;
Hsien-Hsin Sean Lee, Duluth, GA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.