The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jan. 16, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Meng-Fan Wu, Keelung, TW;
I-Fan Lin, Hsinchu, TW;
Ke-Ying Su, Taipei, TW;
Hsiao-Shu Chao, Baoshan Township, TW;
Yi-Kan Cheng, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method comprises: selecting a circuit pattern or network of circuit patterns in a layout of an integrated circuit (IC) to be fabricating using double patterning technology (DPT). Circuit patterns near the selected circuit pattern or network are grouped into one or more groups. For each group, a respective expected resistance-capacitance (RC) extraction error cost is calculated, which is associated with a mask alignment error, for two different sets of mask assignments. The circuit patterns in the one or more groups are assigned to be patterned by respective photomasks, so as to minimize a total of the expected RC extraction error costs.