Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiao-Shu Chao

Yi-Kan Cheng

Ke-Ying Su

Chung-Hsing Wang

Wen-Ju Preet Yang

Chin-Chang Hsu

Lee-Chung Lu

Ching-Shun Yang

Ru-Gun Liu

Yung-Chin Hou

Ze-Ming Wu

Chih-Ming Lai

Jui-Feng Kuan

Huang-Yu Chen

Tsong-Hua Ou

Cheng-I Huang

Yao-Ching Ku

Ying-Chou Cheng

Ho Che Yu

Chia-Ming Ho

Ying-Yu Shen

Min-Hong Wu

Chung-Kai Lin

Te-Yu Liu

Chih Sheng Tsai

Ping-Heng Yeh

Shu Yi Ying

Austin Chingyu Chiang

Chin-Yu Chiang

Dian-Hau Chen

Wen-Chun Huang

Yuan-Te Hou

Hsien-Hsin Sean Lee

Chin-Hsiung Hsu

Cliff Hou

Cheng-Hung Yeh

Yi-Chuin Tsai

Yih-Yuh Doong

Hung Lung Lin

HungLung Lin

I-Fan Lin

Meng-Fan Wu

Chen-Fu Huang

Chen-Fu “Alex” Huang

An embodiment of the present invention is a computer program product for providing an adjusted electronic representation of an integrated circuit layout. The computer program product has a medium with a computer program embodied thereon. Further, the computer program comprises computer program code for providing full node cells from a full node netlist, computer program code for scaling the full node cells to provide shrink node cells, computer program code for providing a timing performance of the full node cells and the shrink node cells, computer program code for comparing the timing performance of the full node cells to the timing performance of the shrink node cells, and computer program code for providing a first netlist.

Optimization for circuit migration

A method includes selecting a process corner, determining model parameters for forming an integrated circuit, and generating a file using the model parameters for the process corner. The generating the file is performed using a computer. The file includes at least two of a first capacitance table, a second capacitance table, and a third capacitance table. The first capacitance table stores greatest parasitic capacitances between layout patterns of the integrated circuit when lithography masks including the layout patterns shift relative to each other. The second capacitance table stores smallest parasitic capacitances between the layout patterns when the lithography masks shift relative to each other. The third capacitance table stores nominal parasitic capacitances between the layout patterns when the lithography masks do not shift relative to each other.

RC corner solutions for double patterning technology

An embodiment is a method for providing an adjusted electronic representation of an integrated circuit layout, the method including using one or more processor, generating a timing performance of a path in a first netlist, identifying a first cell in the path that violates a timing performance parameter, and generating a plurality of derivative cells from a subsequent cell that is in the path after the first cell, where each derivative cell includes a variation of the subsequent cell. The method further includes in response to the identifying the first cell, replacing the subsequent cell with at least one of the plurality of derivative cells to generate a first modified netlist, where the variation of the at least one of the plurality of derivative cells reduces the violation of the timing performance parameter, and generating a final netlist based on the first modified netlist.

A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns.

RC extraction for single patterning spacer technique

A method of generating a simulation model of a predefined fabrication process according to a sample conductive feature includes receiving a geometry configuration and layout design of the conductive feature. A circuit-level simulation model of the sample conductive feature based on the geometry configuration of the sample conductive feature is generated. A hardware processor converts the circuit-level simulation model of the sample conductive feature into at least a first layout bias rule corresponding to a first set of predetermined criteria of the layout design and a second layout bias rule, different from the first layout bias rule, corresponding to a second set of predetermined criteria of the layout design.

Method of generating a simulation model of a predefined fabrication process

The method for extracting a capacitance from a layout is disclosed. The method decomposes a first net into a first and a second component, and decomposes a second net into a third and a fourth component. The method may obtain a first capacitance for the first component and the third component by a first method, and obtain a second capacitance for the second component and the fourth component by a second method different from the first method. A library with a plurality of entries may be provided, wherein each entry has a component pair comprising a component of the first net and a component of the second net, and a pre-calculated capacitance for the component pair. The first method may be to search a library to find a pre-calculated capacitance. The second method may be to obtain the first capacitance by an equation solver on the fly.

Methods and apparatus for RC extraction

The present disclosure relates to methods and apparatuses for generating a through-silicon via (TSV) model for RC extraction that accurately models an interposer substrate comprising one or more TSVs. In some embodiments, a method is performed by generating an interposer wafer model having a sub-circuit that models a TSV. The sub-circuit can compensate for limitations in resistive and capacitive extraction of traditional TSV models performed by EDA tools. In some embodiments, the sub-circuit is coupled to a floating common node of the model. The floating common node enables the interposer wafer model to take into consideration capacitive coupling within the interposer. The improved interposer wafer model enables accurate RC extraction of an interposer with one or more TSVs, thereby providing for an interposer wafer model that is consistent between GDS and APR flows.

RC extraction methodology for floating silicon substrate with TSV

A method of generating a bias-adjusted layout design of a conductive feature includes receiving a layout design of the conductive feature. If a geometry configuration of the layout design is within a first set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a first layout bias rule. If the geometry configuration of the layout design is within a second set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a second layout bias rule.

Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process

A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.

Parasitic capacitance extraction for FinFETs

Provided is a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the design layout. The features are designated by markings that associate the various device features with the multiple photomasks upon which they will be formed and then produced on a semiconductor device level using double patterning lithography, DPL, techniques. The markings are done at the device level and are included on the electronic file provided by the design house to the photomask foundry. In addition to overlay and critical dimension considerations for the design layout being decomposed, various other device criteria, design criteria processing criteria and their interrelation are taken into account, as well as device environment and the other device layers, when determining and marking the various device features.

Decomposition and marking of semiconductor device design layout in double patterning lithography

A method includes determining model parameters for forming an integrated circuit, and generating a techfile using the model parameters. The techfile includes at least two of a C_worst table, a C_best table, and a C_nominal table. The C_worst table stores greatest parasitic capacitances between layout patterns of the integrated circuit when lithography masks comprising the layout patterns shift relative to each other. The C_best table stores smallest parasitic capacitances between the layout patterns when the lithography masks shift relative to each other. The C_nominal table stores nominal parasitic capacitances between the layout patterns when the lithography masks do not shift relative to each other. The techfile is embodied on a tangible non-transitory storage medium.

A method comprises: selecting a circuit pattern or network of circuit patterns in a layout of an integrated circuit (IC) to be fabricating using double patterning technology (DPT). Circuit patterns near the selected circuit pattern or network are grouped into one or more groups. For each group, a respective expected resistance-capacitance (RC) extraction error cost is calculated, which is associated with a mask alignment error, for two different sets of mask assignments. The circuit patterns in the one or more groups are assigned to be patterned by respective photomasks, so as to minimize a total of the expected RC extraction error costs.

Method and system for photomask assignment for double patterning technology

An embodiment method of streamlining parasitic modeling using a common device profile includes importing, using a processor, a simulated middle end of line (MEOL) profile into a characterization tool, generating, using the processor, a MEOL pattern based on the simulated MEOL profile, import, using the processor, the MEOL pattern and a real profile into a field solver to generate a MEOL capacitance table, updating, using the processor, capacitance data in the characterization tool based on the MEOL capacitance table generated, and generating, using the processor, a resistance and capacitance parasitic extraction technology file using the characterization tool with the capacitance data as updated.

Streamlined parasitic modeling with common device profile

In a semiconductor device design method performed by at least one processor, first and second electrical components are extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second electrical components in the semiconductor substrate. Parasitic parameters of a coupling in the semiconductor substrate between the first and second electrical components are extracted using a first tool. Intrinsic parameters of the first and second electrical components are extracted using a second tool different from the first tool. The extracted parasitic parameters and intrinsic parameters are combined into a model of the semiconductor device. The parasitic parameters of the coupling are extracted based on a model of the coupling included in the second tool.

Semiconductor device design method, system and computer-readable medium

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Baoshan, China

Hsiao-Shu Chao