Hitachi, Japan

Hidekatsu Onose


Average Co-Inventor Count = 2.6

ph-index = 8

Forward Citations = 216(Granted Patents)


Location History:

  • Hitachi, JP (1992 - 2014)
  • Tokyo, JP (2016 - 2017)

Company Filing History:


Years Active: 1992-2017

where 'Filed Patents' based on already Granted Patents

22 patents (USPTO):

Title: Innovator Profile: Hidekatsu Onose - Pioneer in Semiconductor Technology

Introduction: Hidekatsu Onose, a notable inventor hailing from Hitachi, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 22 patents, Onose is known for his innovative approaches that enhance the reliability and performance of semiconductor devices.

Latest Patents: Among his recent innovations, Onose has developed several influential patents. One of his latest patents is the "Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth." This invention provides a highly reliable semiconductor device capable of withstanding high voltage. The design entails specific impurity concentration levels in both first and second JTE regions to optimize performance, particularly in Schottky diodes and junction barrier Schottky diodes. Another patent titled "Semiconductor device with similar impurity concentration JTE regions" follows a similar innovative theme, further emphasizing the importance of impurity control in semiconductor device reliability.

Career Highlights: Hidekatsu Onose has built his career within respected companies in the technology sector, including Hitachi, Ltd. and Renesas Electronics Corporation. His work has played a critical role in advancing semiconductor technologies and ensuring high-performance electronic components.

Collaborations: Throughout his career, Onose has collaborated with esteemed colleagues such as Michio Ohue and Ryuichi Saito. These collaborations have fostered innovation and led to the development of groundbreaking solutions in the field of semiconductors.

Conclusion: Hidekatsu Onose's contributions to semiconductor technology exemplify his dedication to innovation. With numerous patents to his name, he continues to influence the industry, pushing the boundaries of what is possible in high-voltage semiconductor devices. His work inspires future generations of inventors and engineers in the ever-evolving world of technology.

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