The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Apr. 07, 2011
Applicant:
Hidekatsu Onose, Hitachi, JP;
Inventor:
Hidekatsu Onose, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/73 (2006.01); H01L 29/808 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 29/0878 (2013.01); H01L 29/6606 (2013.01); H01L 29/7803 (2013.01); H01L 21/26586 (2013.01); H01L 29/1004 (2013.01); H01L 29/66068 (2013.01); H01L 29/7302 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/8083 (2013.01); H01L 29/1066 (2013.01);
Abstract
For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an ncathode layer, an ndrift layer on the ncathode layer, a pair of pregions, an nchannel region formed between the ndrift layer and the pregion and sandwiched between the pair of pregions, nanode regions and an anode electrode formed on the nanode regions and the pregions.