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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9755014 B1

PDFFull Text
Date of Patent:
Sep. 05, 2017

Filed:

Sep. 28, 2016

Semiconductor device with substantially equal impurity concentration jte regions in a vicinity of a junction depth

Applicant:

Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, Ibaraki, JP;

Inventors:

Kazuhiro Mochizuki, Tokyo, JP;

Hidekatsu Onose, Tokyo, JP;

Norifumi Kameshiro, Tokyo, JP;

Natsuki Yokoyama, Tokyo, JP;

Assignee:

HITACHI POWER SEMICONDUCTOR DEVICE, LTD., Ibaraki, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Selim Ahmed

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01); H01L 29/36 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/046 (2013.01); H01L 21/0495 (2013.01); H01L 29/06 (2013.01); H01L 29/0615 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract

A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×10cmor higher and 6×10cmor lower and an impurity concentration in a second JTE region is set to 2×10cmor lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×10cmor higher and 8×10cmor lower and an impurity concentration in the second JTE region is set to 2×10cmor lower in a case of a junction barrier Schottky diode.

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