The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Aug. 13, 2003
Applicants:
Hidekatsu Onose, Hitachi, JP;
Atsuo Watanabe, Hitachiota, JP;
Inventors:
Hidekatsu Onose, Hitachi, JP;
Atsuo Watanabe, Hitachiota, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L030/0256 ; H01L029/74 ;
U.S. Cl.
CPC ...
Abstract
A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a pgate and a gate electrode is formed on the bottom of the first region, the structure is built such that the pgate and an nsource are contiguous. An insulating film is formed on the surface of an nchannel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.