The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Apr. 15, 2002
Applicant:
Inventors:
Tsutomu Yatsuo, Hitachi, JP;
Toshiyuki Ohno, Hitachi, JP;
Hidekatsu Onose, Hitachi, JP;
Saburo Oikawa, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10312 ;
U.S. Cl.
CPC ...
H01L 3/10312 ;
Abstract
In a static induction transistor, in addition to a first gate layer ( ), a plurality of second gate layers ( ) having a shallower depth and a narrower gap therebetween than those of the first gate layer ( ) are provided in an area surrounded by the first gate layer ( ), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof.