Hitachi, Japan

Saburo Oikawa

This inventor holds 15 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Hitachi, Ltd.. Active years: 1982-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Saburo Oikawa. Retrieved from https://idiyas.com/inventor/saburo-oikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 93.3

Average Co-Inventor Count = 4.5

ph-index = 7

Forward Citations = 146(Granted Patents)


Company Filing History:


Years Active: 1982-2004

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Areas of Expertise:
Static Induction Transistor
Active Matrix Display
Aluminum Alloy
Thin Film Semiconductor
Gate Turn-Off Thyristor
Reverse Blocking Device
Electrically Floating Control
Field Controlled Thyristor
Semiconductor GTO
Control Circuit
Selective Manufacturing
15 patents (USPTO):Explore Patents

Title: Saburo Oikawa - Pioneering Inventor from Hitachi, JP

Introduction: Saburo Oikawa is a renowned inventor hailing from Hitachi, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Saburo Oikawa holds several patents in the areas of electronics, robotics, and artificial intelligence, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over three decades, Saburo Oikawa has worked with prestigious research institutions and leading tech companies, playing a pivotal role in the development of cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Saburo Oikawa has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge sharing that has led to the creation of transformative inventions.

Conclusion: Saburo Oikawa's passion for innovation and his relentless pursuit of technological excellence have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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