Toshiyuki Ohno

Title: Toshiyuki Ohno: Innovator in Silicon Carbide Technology

Introduction

Toshiyuki Ohno is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon carbide technology. With a total of 13 patents to his name, Ohno has made remarkable advancements that have impacted the semiconductor industry.

Latest Patents

One of his latest patents is for a silicon carbide epitaxial wafer that features a thick silicon carbide layer with minimal warpage. This innovation includes a silicon carbide substrate and a silicon carbide layer with a film thickness of 100 μm or more, achieving a warpage amount between -20 μm and 20 μm. Another notable patent involves a silicon carbide semiconductor device and its manufacturing method. This invention addresses the issue of carbon-excess layers formed on the surface of MOSFETs, which degrade the mobility of channel carriers. By removing the carbon-carbon bonds and employing a low-temperature interface treatment, this method effectively eliminates the carbon-excess layer and dangling bonds, enhancing device performance.

Career Highlights

Throughout his career, Toshiyuki Ohno has worked with leading companies such as Hitachi, Ltd. and Toshiba Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Ohno has collaborated with notable colleagues, including Tsutomu Yatsuo and Yuzo Kozono, contributing to the advancement of silicon carbide applications.

Conclusion

Toshiyuki Ohno's work in silicon carbide technology has led to significant innovations that enhance semiconductor performance. His patents reflect a deep understanding of material science and engineering, positioning him as a key figure in the industry.