The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Feb. 20, 2019
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Keiko Masumoto, Nagareyama, JP;
Satoshi Segawa, Tsukuba, JP;
Kazutoshi Kojima, Tsukuba, JP;
Tomohisa Kato, Tsukuba, JP;
Toshiyuki Ohno, Tokyo, JP;
Abstract
A silicon carbide epitaxial wafer () of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate () and a silicon carbide layer () provided on a first principal plane (A) of the silicon carbide substrate () and having a film thickness of 100 μm or more, wherein a warpage amount of the silicon carbide epitaxial wafer is −20 μm or more and 20 μm or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile