EPO Patents = 1

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 18(Granted Patents)

Location History:

Susono, JP (1994)
Ibaraki, JP (2017 - 2018)
Tsukuba, JP (2006 - 2023)

Company Filing History:

National Institute of Advanced Industrial Science and Technology

Fuji Electric Co., Ltd.

patents

5. 2 out of 36,653

Toyota Jidosha Kabushiki Kaisha

patents

6. 1 out of 90

Taiheiyo Cement Corporation

Kabushiki Kaisha Toyota System Research

patent

where one patent can have more than one assignee

Years Active: 1994-2023

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11655561 - n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC single crystal substrate (2023-05-23),

2. 11542631 - Method for producing p-type 4H-SiC single crystal (2023-01-03),

3. 10892334 - n-Type SiC single crystal substrate, method for producing same and SiC epitaxial wafer (2021-01-12),

4. 10879359 - Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof (2020-12-29),

5. 10453693 - Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate (2019-10-22),

6. 10354867 - Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device (2019-07-16),

7. 10119920 - Method comprising evaluating substrate by polarized parallel light (2018-11-06),

8. 9960048 - Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate (2018-05-01),

9. 9816200 - Silicon carbide powder and method for producing silicon carbide single crystal (2017-11-14),

10. 9620374 - Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate (2017-04-11),

11. 9053834 - Silicon carbide single crystal and manufacturing method of the same (2015-06-09),

12. 7396411 - Apparatus for manufacturing single crystal (2008-07-08),

13. 7045009 - Method and apparatus for manufacturing single crystal (2006-05-16),

14. 5356695 - Structure of panel (1994-10-18),

Title: The Innovative Journey of Tomohisa Kato

Introduction: Tomohisa Kato is a renowned inventor hailing from Tsukuba, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tomohisa Kato holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Tomohisa Kato has worked with leading research institutions and tech companies, playing a pivotal role in the development of cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Tomohisa Kato has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the creation of groundbreaking inventions.

Conclusion: Tomohisa Kato's passion for innovation and his relentless pursuit of technological excellence have solidified his position as a trailblazer in the world of inventions, inspiring future generations to push the boundaries of what is possible in the realm of technology.

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1 patent (EPO):

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