The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Jan. 10, 2018
Applicants:

Vision Psytec Co., Ltd., Nagano, JP;

Mipox Corporation, Tokyo, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Seiji Mizutani, Nagano, JP;

Kenji Nakagawa, Tokyo, JP;

Tomohisa Kato, Ibaraki, JP;

Kensuke Takenaka, Kanagawa, JP;

Assignees:

Fuji Electric Co., Ltd., Kanagwa, JP;

Mipox Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G02B 21/00 (2006.01); G01N 21/892 (2006.01); G01B 11/30 (2006.01); G01N 21/21 (2006.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01B 11/30 (2013.01); G01N 21/21 (2013.01); G01N 21/8806 (2013.01); G01N 21/892 (2013.01); G02B 21/0004 (2013.01); G02B 21/0092 (2013.01); G01N 2021/8848 (2013.01); G01N 2021/8925 (2013.01);
Abstract

There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below3≤HW≤1000.1≤DA≤5250≤CWL≤1600


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