The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Sep. 25, 2017
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/02 (2006.01); C30B 33/02 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 21/203 (2006.01); C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); C30B 23/02 (2013.01); C30B 23/06 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); H01L 21/203 (2013.01); H01L 29/1608 (2013.01);
Abstract
An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0×10/cm.