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Years Active: 2021-2023
Title: Kazuma Eto: Innovator in Silicon Carbide Technology
Introduction
Kazuma Eto is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of silicon carbide (SiC) technology, particularly in the development of single crystal substrates. With a total of 3 patents, his work has advanced the understanding and application of SiC materials in various industries.
Latest Patents
Kazuma Eto's latest patents include innovative methods for producing n-type and p-type 4H-SiC single crystal substrates. The n-type 4H-SiC single crystal substrate patent describes a substrate with a donor concentration of nitrogen and an acceptor concentration of boron, both exceeding 3×10^cmor, while maintaining a threading dislocation density of less than 4,000/cm. His p-type 4H-SiC single crystal production method involves sublimating a nitrided aluminum raw material alongside a SiC raw material, resulting in a co-doped SiC single crystal stacked on a seed crystal.
Career Highlights
Throughout his career, Kazuma Eto has worked with notable organizations such as Showa Denko K.K. and the National Institute of Advanced Industrial Science and Technology. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and their applications.
Collaborations
Kazuma Eto has collaborated with esteemed colleagues, including Tomohisa Kato and Hiromasa Suo. These partnerships have fostered innovation and contributed to the advancement of SiC technology.
Conclusion
Kazuma Eto's contributions to the field of silicon carbide technology are noteworthy. His patents and career achievements reflect his dedication to innovation and excellence in materials science. His work continues to influence the development of advanced semiconductor technologies.