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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11542631 B1

PDFFull Text
Date of Patent:
Jan. 03, 2023

Filed:

Jun. 29, 2020

Method for producing p-type 4h-sic single crystal

Applicants:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Showa Denko K.k., Tokyo, JP;

Denso Corporation, Aichi, JP;

Inventors:

Kazuma Eto, Tsukuba, JP;

Tomohisa Kato, Tsukuba, JP;

Hiromasa Suo, Tsukuba, JP;

Yuichiro Tokuda, Miyoshi, JP;

Assignees:

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

SHOWA DENKO K.K., Tokyo, JP;

DENSO CORPORATION, Kariya, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); C30B 23/00 (2006.01); H01B 1/04 (2006.01);
U.S. Cl.
CPC ...
C30B 23/06 (2013.01); C30B 23/002 (2013.01); C30B 29/36 (2013.01); H01B 1/04 (2013.01); H01L 21/0262 (2013.01); H01L 21/02447 (2013.01);
Abstract

A method for producing a p-type 4H—SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

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Eto, Kazuma. (2023). Method for producing p-type 4h-sic single crystal (U.S. Patent No. 11542631). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11542631

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