Hiromasa Suo

Title: Hiromasa Suo: Innovator in Silicon Carbide Technology

Introduction

Hiromasa Suo is a prominent inventor based in Hikone, Japan. He has made significant contributions to the field of silicon carbide (SiC) technology, particularly in the development of single crystal substrates. With a total of 3 patents, Suo's work has advanced the capabilities of semiconductor materials.

Latest Patents

Suo's latest patents include the "n-Type 4H-SiC Single Crystal Substrate and Method of Producing n-Type 4H-SiC Single Crystal Substrate." This innovation focuses on achieving a high concentration of donor and acceptor elements while maintaining a low threading dislocation density. Another notable patent is the "Method for Producing p-Type 4H-SiC Single Crystal," which involves sublimating a nitrided aluminum raw material alongside a SiC raw material to create a co-doped single crystal.

Career Highlights

Throughout his career, Hiromasa Suo has worked with esteemed organizations such as Showa Denko K.K. and the National Institute of Advanced Industrial Science and Technology. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and their applications.

Collaborations

Suo has collaborated with notable colleagues, including Kazuma Eto and Tomohisa Kato. These partnerships have contributed to the advancement of research and development in the field of silicon carbide technology.

Conclusion

Hiromasa Suo's innovative work in silicon carbide technology has positioned him as a key figure in the semiconductor industry. His patents reflect a commitment to enhancing the performance and quality of semiconductor materials.