Showa Denko K.k.

Denso Corporation

National Institute of Advanced Industrial Science and Technology

Kazuma Eto

Tomohisa Kato

Hiromasa Suo

Yuichiro Tokuda

In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3&#xd7;10/cmor more, and a threading dislocation density is less than 4,000/cm.

n-Type 4H&#x2014;SiC single crystal substrate and method of producing n-type 4H&#x2014;SiC single crystal substrate

A method for producing a p-type 4H&#x2014;SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

Method for producing p-type 4H-SiC single crystal

An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0&#xd7;10/cm.

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Tsukuba, Japan

Kazuma Eto