Showa Denko K.k.

National Institute of Advanced Industrial Science and Technology

Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Fuji Electric Co., Ltd.

Taiheiyo Cement Corporation

Mipox Corporation

Kabushiki Kaisha Toyota System Research

Tomohisa Kato

Takanori Kido

Fusao Hirose

Kazutoshi Kojima

Kazuma Eto

Hiromasa Suo

Shinichi Nishizawa

Hidekazu Tsuchida

Takeo Mori

Takeshi Tawara

Masakazu Suzuki

Ayumu Adachi

Toshiyuki Ohno

Yoshiyuki Yonezawa

Kenji Nakagawa

Koichi Nishikawa

Eiichi Hamada

Jun Kojima

Yuichiro Tokuda

Kouki Ichitsubo

Tetsuya Miyazawa

Akihiro Otsuki

Kenta Masuda

Keiko Masumoto

Kensuke Takenaka

Hideaki Tanaka

Kiyoshi Nonaka

Seiji Mizutani

Satoshi Segawa

In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3&#xd7;10/cmor more, and a threading dislocation density is less than 4,000/cm.

n-Type 4H&#x2014;SiC single crystal substrate and method of producing n-type 4H&#x2014;SiC single crystal substrate

A method for producing a p-type 4H&#x2014;SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

Method for producing p-type 4H-SiC single crystal

An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0&#xd7;10/cm.

n-Type SiC single crystal substrate, method for producing same and SiC epitaxial wafer

A silicon carbide epitaxial wafer () of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate () and a silicon carbide layer () provided on a first principal plane (A) of the silicon carbide substrate () and having a film thickness of 100 &#x3bc;m or more, wherein a warpage amount of the silicon carbide epitaxial wafer is &#x2212;20 &#x3bc;m or more and 20 &#x3bc;m or less.

Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof

A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.

Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device

There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below3&#x2264;HW&#x2264;1000.1&#x2264;DA&#x2264;5250&#x2264;CWL&#x2264;1600

Method comprising evaluating substrate by polarized parallel light

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm/g to 1,000 cm/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

Silicon carbide powder and method for producing silicon carbide single crystal

A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2&#xd7;10cmor higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Silicon carbide single crystal and manufacturing method of the same

A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Apparatus for manufacturing single crystal

Method and apparatus for manufacturing single crystal

A structure of a panel includes a peripheral portion and an intermediate portion integrally provided with the peripheral portion. At least the intermediate portion includes a curved surface having a substantially constant sum of the maximum curvature and the minimum curvature at all the points on a surface of the intermediate portion. Further, the peripheral portion is formed as the same curved surface as the curved surface of the intermediate portion, or a curved surface having a curvature different from the curvature of the curved surface of the intermediate portion so as to enhance the panel stiffness of the peripheral portion.

Structure of panel

Growing community of inventors

Tsukuba, Japan

Tomohisa Kato