The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Apr. 16, 1998
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9161 ; H01L 2/9808 ;
U.S. Cl.
CPC ...
H01L 2/9161 ; H01L 2/9808 ;
Abstract
In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region is formed partially overlapping a n-type source region, whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.
Iwasaki, Takayuki. (2001). Static induction semiconductor device, and driving method and drive circuit thereof (U.S. Patent No. 6180959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6180959
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile