The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1989
Filed:
Sep. 02, 1987
Hitachi, Ltd., Tokyo, JP;
Abstract
An electrophotographic sensitized body having a photoconductive layer comprising hydrogenated amorphous silicon on a substrate which comprises conductive material selected from the group consisting of A1, A1-Si (0.2-1.2 wt. %) - Mg (0.45-1.2 wt. %) alloy, super duralmine and extra super duralmine. Provided between the substrate and the photoconductive layer is a diffusion blocking layer 0.005-5 microns in thickness comprising a material selected from the group consisting of titanium nitride, tantalum nitride, hafnium nitride, platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide, zirconium silicide, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide and metallic chrome. The decrease in specific resistance of the photoconductive layer caused by diffusion of the substrate constituent to the photoconductive layer is prevented and the sensitivity to the light in the region of oscillatory wavelength of semiconductor is remarkably improved.