Hitachi, Ltd.

Kabushiki Kaisha Toshiba

Toshiba Solutions Corporation

National Institute of Advanced Industrial Science and Technology

Hitachi Chemical Company, Ltd.

Toshiyuki Ohno

Tsutomu Yatsuo

Yoshinobu Kimura

Hiroya Ohta

Natsuki Tsuno

Yuki Mori

Hidekatsu Onose

Hirotaka Hamamura

Kunihiro Tamahashi

Mitsuo Chigasaki

Yuzo Kozono

Renichi Yamada

Digh Hisamoto

Masanobu Hanazono

Takaya Suzuki

Naoki Tega

Mieko Matsumura

Takayuki Iwasaki

Saburo Oikawa

Tomohisa Kato

Masahiro Kasai

Kazutoshi Kojima

Keisuke Kobayashi

Daisuke Kawase

Makoto Fujikura

Shigeharu Onuma

Yohsuke Inoue

Shogo Ishii

Keiko Masumoto

Hiroyuki Okino

Yasuo Shimamura

Yoko Kanke

Satoshi Segawa

Saburou Oikawa

A silicon carbide epitaxial wafer () of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate () and a silicon carbide layer () provided on a first principal plane (A) of the silicon carbide substrate () and having a film thickness of 100 &#x3bc;m or more, wherein a warpage amount of the silicon carbide epitaxial wafer is &#x2212;20 &#x3bc;m or more and 20 &#x3bc;m or less.

Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof

A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.

Silicon carbide semiconductor device and method for manufacturing same

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Semiconductor inspection device including a counter electrode with adjustable potentials used to obtain images for detection of defects, and inspection method using charged particle beam

In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element

The hand movement correction apparatuswhich is capable of correcting hand movement includes: a position variation signal acquisition sectionsandthat acquire a position variation signal; a gain controllerthat controls the gain of the position variation signal; an exposure determination sectionthat determines whether exposure operation is in progress; a position variation signal switching sectionthat switches the position variation signal; and a hand movement amount calculation sectionthat calculates a hand movement correction amount based on the position variation signal.

Hand movement correction apparatus, medium storing hand movement correction program, image pickup apparatus, and medium storing image pickup program

An object of the present invention is to provide a simulator for verifying plural products with common hardware configuration, in which peripheral hardware that can be reused are constituted by hardware and other peripheral hardware is constituted by software simulator, and simulation method. A simulator comprises: a hardware section that includes a peripheral hardware configuration with a structure required for a CPU and OS to operate alone; a software section that simulates the operation of peripheral hardware other than hardware constituting the hardware section as a peripheral hardware model; and an interface board that connects the hardware section and software section.

Simulator and simulation method

In a static induction transistor, in addition to a first gate layer ( ), a plurality of second gate layers ( ) having a shallower depth and a narrower gap therebetween than those of the first gate layer ( ) are provided in an area surrounded by the first gate layer ( ), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof.

Static induction transistor

To reduce the field intensity on the termination surface, almost not affecting the on-characteristic, a drift layer is made of two layers, an n-layer and n layer, and a termination region is formed on the surface of the above n layer. An impurity concentration ratio between the n layer and the n-layer is less than 1:2, and the thickness of the n layer is less than that of a source n layer. Reliability can be secured even in a high temperature operation.

Semiconductor device and power converter using the same

In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region is formed partially overlapping a n-type source region, whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.

Static induction semiconductor device, and driving method and drive circuit thereof

To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1

Semiconductor device for improved power conversion having a

A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.

Spin interaction device

An electrophotographic sensitized body having a photoconductive layer comprising hydrogenated amorphous silicon on a substrate which comprises conductive material selected from the group consisting of A1, A1-Si (0.2-1.2 wt. %) - Mg (0.45-1.2 wt. %) alloy, super duralmine and extra super duralmine. Provided between the substrate and the photoconductive layer is a diffusion blocking layer 0.005-5 microns in thickness comprising a material selected from the group consisting of titanium nitride, tantalum nitride, hafnium nitride, platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide, zirconium silicide, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide and metallic chrome. The decrease in specific resistance of the photoconductive layer caused by diffusion of the substrate constituent to the photoconductive layer is prevented and the sensitivity to the light in the region of oscillatory wavelength of semiconductor is remarkably improved.

Electrophotographic sensitized body having a diffusion blocking layer

The photoconductive layer (3) has a triple-layer structure comprised of an upper layer (33) made of amorphous silicon containing germanium and carbon, a middle layer (32) made of amorphous silicon containing germanium, and a lower layer (31) made of amorphous silicon. The upper layer (33) formed between a surface layer (4) and the middle layer (32), and the lower layer (31) formed between the middle layer (32) and a barrier layer (2) serve to reduce the energy difference and the interfacial state between respective layers thus, high electrophotographic sensitivity for a longer wavelength light can be obtained, and sensitivity in the oscillation wavelength of a GaAlAs diode laser improves effectively.

Multilayered electrophotographic photosensitive member

Growing community of inventors

Tokyo, Japan

Toshiyuki Ohno