The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 14, 2013
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Yoshinobu Kimura, Tokyo, JP;
Natsuki Tsuno, Tokyo, JP;
Hiroya Ohta, Tokyo, JP;
Renichi Yamada, Tokyo, JP;
Hirotaka Hamamura, Tokyo, JP;
Toshiyuki Ohno, Tokyo, JP;
Hiroyuki Okino, Tokyo, JP;
Yuki Mori, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.