The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Mar. 02, 2010
Hidekatsu Onose, Hitachi, JP;
Hidekatsu Onose, Hitachi, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for control. The junction FET has a first gate electrode, a first source electrode, and a first drain electrode. The MISFET has a second gate electrode, a second source electrode, and a second drain electrode. The MISFET is an n-channel type MISFET and has electric characteristics of an enhancement mode MISFET. The second gate electrode and the second drain electrode of the MISFET are connected to each other by short-circuiting. The first gate electrode of the junction FET and the second source electrode of the MISFET are connected to each other by short-circuiting.