The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jan. 25, 2007
Katsumi Ishikawa, Hitachinaka, JP;
Sunao Funakoshi, Kasumigaura, JP;
Kozo Sakamoto, Hitachinaka, JP;
Hidekatsu Onose, Hitachi, JP;
Katsumi Ishikawa, Hitachinaka, JP;
Sunao Funakoshi, Kasumigaura, JP;
Kozo Sakamoto, Hitachinaka, JP;
Hidekatsu Onose, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A driver circuit that lowers the dependence of the loss in the wide gap semiconductor device upon the temperature is provided. A gate driver circuit for voltage driven power semiconductor switching device includes a power semiconductor switching device, a driver circuit for supplying a drive signal to a gate terminal of the switching device with reference to an emitter control terminal or a source control terminal of the switching device, and a unit for detecting a temperature of the switching device. The temperature of the power semiconductor switching device is detected, and a gate drive voltage or a gate drive resistance value is changed based on the detected temperature.