The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Jul. 24, 2008
Hidekatsu Onose, Hitachi, JP;
Hiroyuki Takazawa, Hino, JP;
Hidekatsu Onose, Hitachi, JP;
Hiroyuki Takazawa, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A UMOSFET is capable of reducing a threshold voltage and producing a large saturation current. A typical UMOSFET according to the present invention includes: an Ntype SiC substrate constituting a drain layer; an Ntype SiC layer that is in contact with the drain layer and constitutes a drift layer; a P type body layer formed on the drift layer and being a semiconductor layer; an Ntype SiC layer constituting a source layer; a trench extending from the source layer to a predetermined location placed in the drift layer; a P type electric field relaxation region provided around and outside a bottom portion of the trench; and a channel region extending from the Ntype source layer to the P type electric field relaxation region and having an impurity concentration higher than that of the Ntype drift layer and lower than that of the P type body layer.