Taipei, Taiwan

Heng-Sheng Huang

This inventor holds 27 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: United Microelectronics Corp.. Active years: 1994-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heng-Sheng Huang. Retrieved from https://idiyas.com/inventor/heng-sheng-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 12

Forward Citations = 378(Granted Patents)


Company Filing History:


Years Active: 1994-2004

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Areas of Expertise:
MOSFET
Gate Structure
DRAM Capacitor
Shallow Trench Isolation
Air Gap
Dynamic Random Access Memory
Silicon Oxynitride
Polysilicon
Integrated Circuits
VLSI
Memory Cells
27 patents (USPTO):Explore Patents

Title: **The Innovative Mind of Heng-Sheng Huang: A Pioneer in Semiconductor Technology**

Introduction

Heng-Sheng Huang is a distinguished inventor based in Taipei, Taiwan, celebrated for his remarkable contributions to the field of semiconductor technology. With an impressive portfolio of 27 patents, Huang has demonstrated an unwavering commitment to advancing the effectiveness and efficiency of metal-oxide-semiconductor field effect transistors (MOSFETs).

Latest Patents

Among Heng-Sheng Huang's latest innovations is a patent for a **Method for measuring an effective channel length of a MOSFET**. This groundbreaking method introduces three compensation factors aimed at enhancing the capacitance-voltage (C-V) technique for accurately determining the effective channel length of MOSFETs, as well as the overlap length of the gate with the source and drain. The plurality of compensation factors ensures improved measurement precision, paving the way for enhanced semiconductor performance.

Another notable patent from Huang is the **Method for manufacturing gate terminal**. This innovative approach involves a sequence of meticulous steps including substrate preparation, oxide layer patterning, and the formation of both gate oxide and a crystalline silicon layer. Notably, the introduction of a tungsten layer, followed by polishing, contributes to the production of a high-quality gate electrode while also mitigating current leakage through precise etching techniques. This method exemplifies Huang's dedication to improving manufacturing processes in semiconductor technology.

Career Highlights

Heng-Sheng Huang currently serves as an inventor at **United Microelectronics Corporation (UMC)**, a leading semiconductor foundry. His extensive experience in the industry is reflected in his notable patent contributions that address critical challenges in semiconductor manufacturing. Huang's innovations not only enhance device performance but also streamline production processes.

Collaborations

Working alongside talented colleagues such as Tony Lin and Wen-Kuan Yeh, Huang fosters a collaborative environment where innovative solutions and groundbreaking ideas thrive. These partnerships have been instrumental in driving the development and refinement of patented technologies within the semiconductor sector.

Conclusion

Heng-Sheng Huang’s impressive body of work continues to influence the semiconductor industry significantly. His innovative methods and collaborative spirit not only exemplify the qualities of a dedicated inventor but also establish him as a key figure in the advancement of semiconductor technology. As he forges ahead with new inventions, the impact of his contributions will undoubtedly resonate within the realm of electronics for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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