The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1999
Filed:
Apr. 13, 1998
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438629 ; 438528 ; 438624 ; 438627 ; 438653 ;
Abstract
A method of forming a barrier layer is disclosed. The barrier layer is formed on the upper surface of the tungsten plug. The method of forming the barrier layer is mainly a nitridation reaction. The nitridation reaction makes use of NH.sub.3 plasma, N.sub.2 plasma and N.sup.+ implantation.
Yeh, Wen-Kuan. (1999). Method of fabricating a barrier layer (U.S. Patent No. 6008118). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6008118
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