Wen-Kuan Yeh

This inventor holds 41 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: United Microelectronics Corp., Other. Active years: 1998-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Kuan Yeh. Retrieved from https://idiyas.com/inventor/wen-kuan-yeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41

% Patents Active = 92.7

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 466(Granted Patents)

Location History:

Hsinchu Hsien, TW (1999 - 2000)
Hsin-Chu, TW (1999 - 2000)
Chupi, TW (2000)
Chu-Pei City, Hsin-Chu County, TW (2001)
Chupei, TW (1998 - 2003)

Company Filing History:

40 out of 7,278

United Microelectronics Corp.

patents

1 out of 834,513

Other

patents

Years Active: 1998-2003

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Areas of Expertise:

Electrostatic Discharge Protection

Silicon-On-Insulator

Metal-Oxide-Semiconductor

Transistor Fabrication

Integrated Circuit

Doped Regions

Dual Damascene Process

Shallow Trench Isolation

Gate Structure

Capacitor Fabrication

Logic Circuit

Contact Process

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6548360 - Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same (2003-04-15),

2. 6509218 - Front stage process of a fully depleted silicon-on-insulator device (2003-01-21),

3. 6476448 - Front stage process of a fully depleted silicon-on-insulator device and a structure thereof (2002-11-05),

4. 6455913 - Copper fuse for integrated circuit (2002-09-24),

5. 6451675 - Semiconductor device having varied dopant density regions (2002-09-17),

6. 6376882 - Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same (2002-04-23),

7. 6365468 - Method for forming doped p-type gate with anti-reflection layer (2002-04-02),

8. 6323073 - Method for forming doped regions on an SOI device (2001-11-27),

9. 6319807 - Method for forming a semiconductor device by using reverse-offset spacer process (2001-11-20),

10. 6306701 - Self-aligned contact process (2001-10-23),

11. 6294834 - Structure of combined passive elements and logic circuit on a silicon on insulator wafer (2001-09-25),

12. 6281134 - Method for combining logic circuit and capacitor (2001-08-28),

13. 6277699 - Method for forming a metal-oxide-semiconductor transistor (2001-08-21),

14. 6274448 - Method of suppressing junction capacitance of source/drain regions (2001-08-14),

15. 6211023 - Method for fabricating a metal-oxide semiconductor transistor (2001-04-03),

Title: The Innovative Journey of Wen-Kuan Yeh

Introduction: Wen-Kuan Yeh, a talented inventor hailing from Chupei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yeh's latest patents showcase his ingenuity in developing cutting-edge solutions for various industries, ranging from electronics to healthcare.

Career Highlights: Throughout his illustrious career, Yeh has been recognized for his exceptional problem-solving skills and forward-thinking approach. His inventions have not only revolutionized existing technologies but have also paved the way for new advancements in the industry.

Collaborations: Yeh has collaborated with leading research institutions, universities, and companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several innovative projects.

Conclusion: In conclusion, Wen-Kuan Yeh's passion for innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]