The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Sep. 10, 2001
United Microelectronics Corp., Hsinchu, TW;
Abstract
An electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the apparatus. Using silicon on insulator technique, a bottom layer, a P-well, a first source/drain region, a second source/drain region and a gate are formed. A selective epitaxial growth region is selectively formed on the first source/drain region, and an N region is formed on the bottom layer. The lower portion of the N region is then adjacent to the P-well, and the upper portion of the N region is adjacent to the gate. Thus, a PNPN silicon control rectifier is formed, and the silicon on insulation CMOS technique is effectively transplanted into the electrostatic discharge apparatus.