The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Jan. 19, 2001
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
An SOI layer has a dielectric layer and a silicon layer formed on the dielectric layer. A shallow trench isolation structure is formed on the silicon layer. The STI structure passes through to the dielectric layer. A thermal diffusion process is performed to drive dopants into a first region of the silicon layer so as to form an N-well or P-well doped region. Next, a thermal diffusion process is performed to drive dopants into a second region of the silicon layer so as to form a P-well or N-well doped region. Finally, an epitaxy layer, having a thickness of about 200 angstroms, is grown on the surface of the silicon layer by way of a molecular-beam epitaxy (MBE) growth process, a liquid-phase epitaxy (LPE) growth process, or a vapor-phase epitaxy (VPE) growth process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile