The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Apr. 09, 1998
Applicant:
Inventors:
Tony Lin, Kao Hsiung Hsien, TW;
Heng-Sheng Huang, Taipei, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438296 ; 438246 ; 438359 ;
Abstract
A method of forming a shallow trench isolation structure is disclosed. A dielectric layer deposited by chemical vapor deposition is used as a sacrificial layer instead of conventional sacrificial oxide layer formed by thermal oxidation. Therefore, the oxide in the trench is further protected and less damaged.
Lin, Tony. (2000). Method of forming shallow trench isolation (U.S. Patent No. 6057208). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6057208
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