The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
May. 06, 1996
Heng-Sheng Huang, Taipei, TW;
United Microelectronics Corp., Hsinchu City, TW;
Abstract
Disclosed is a method of fabricating memory devices. By the method, a silicon nitride layer is used as a mask to form oxide layers on the lateral sides of the word lines through high-temperature heat treatment as source/drain annealing or oxidation. An etching process is subsequently used to remove the silicon nitride layer so as to expose the polysilicon layer on the word lines. After that, metal, preferably aluminum, is selectively grown the exposed polysilicon layer, which allows the resistance of the word lines to be significantly lowered thereby increasing access speed of the memory device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile