The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Dec. 17, 1997
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for depositing a silicon oxynitride layer that has a higher etch-removal rate. The deposition starts by first passing gas from a pipeline A into the deposition chamber before switching the RF power source on. The further is the delay in switching the RF power source on, the higher will be the etch-removal rate of the silicon oxynitride layer formed by the deposition. Furthermore, the RF power source will remain on for a short period after the pump starts pumping gas away from the deposition chamber through pipeline A at the end of the deposition. The sooner is the switching off of the RB power source after the pump start to operate, the higher will be the etch-removal rate of the silicon oxynitride layer that result from the deposition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile