The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Jun. 17, 1997
Meng-Jin Tsai, Hsinchu-Hsien, TW;
Heng-Sheng Huang, Taipei, TW;
Abstract
A method is provided for use in semiconductor fabrication processes for forming a plurality of gate oxide layers with various predefined thicknesses in mixed-mode or embedded circuits that are formed in a semiconductor substrate. In particular, the gate oxide layers of various predefined thicknesses are formed by means of separated growth, which allows all the gate oxide layers to be each formed in one single step, instead of combining two or more oxide layers as in conventional processes, so that the thicknesses can be more easily controllable to the desired levels. The quality of the thus-formed gate oxide layers can thus be better assured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile