Helmut Oefner

This inventor holds 24 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Infineon Technologies Ag. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Helmut Oefner. Retrieved from https://idiyas.com/inventor/helmut-oefner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 (Patent Applications = 3)

% Patents Active = 95.8

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 19(Granted Patents)

Company Filing History:

24 out of 15,036

Infineon Technologies Ag

patents

Years Active: 2016-2025

Loading Chart...

Areas of Expertise:

Silicon Wafer

Doping Method

Epitaxial Layer

Defect Reduction

Carbon Concentration

Planarizing Surfaces

Single Crystal Ingot

Thin Wafer Processing

Semiconductor Device

Oxygen Concentration

CZ Silicon Wafers

Processing Methods

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12211703 - Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer (2025-01-28),

2. 11742215 - Methods for forming a semiconductor device (2023-08-29),

3. 10957767 - Semiconductor device, silicon wafer and method of manufacturing a silicon wafer (2021-03-23),

4. 10837120 - Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device (2020-11-17),

5. 10724149 - Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device (2020-07-28),

6. 10566424 - Semiconductor device, silicon wafer and method of manufacturing a silicon wafer (2020-02-18),

7. 10566198 - Doping method (2020-02-18),

8. 10529838 - Semiconductor device having a variable carbon concentration (2020-01-07),

9. 10319599 - Methods of planarizing SiC surfaces (2019-06-11),

10. 10317338 - Method and assembly for determining the carbon content in silicon (2019-06-11),

11. 10273597 - Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device (2019-04-30),

12. 10026816 - Semiconductor wafer and manufacturing method (2018-07-17),

13. 10014400 - Semiconductor device having a defined oxygen concentration (2018-07-03),

14. 9972704 - Method for forming a semiconductor device and a semiconductor device (2018-05-15),

15. 9972488 - Method of reducing defects in an epitaxial layer (2018-05-15),

Title: The Innovative Mind of Helmut Oefner

Introduction: Helmut Oefner, a distinguished inventor hailing from Zorneding, Germany, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Helmut Oefner's latest patents showcase his expertise in developing cutting-edge solutions for various industries, including automotive, electronics, and renewable energy.

Career Highlights: Throughout his illustrious career, Helmut Oefner has consistently pushed the boundaries of innovation, earning recognition for his pioneering work in areas such as sustainable energy, smart devices, and advanced manufacturing processes.

Collaborations: Helmut Oefner has collaborated with leading research institutions, universities, and multinational corporations to bring his visionary ideas to life. His partnerships have resulted in the successful implementation of numerous groundbreaking technologies.

Conclusion: Helmut Oefner's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of invention. His remarkable contributions continue to inspire future generations of inventors and shape the landscape of technological advancement.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: