The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Nov. 22, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); C30B 15/04 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 29/167 (2013.01); H01L 29/7393 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract
A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.