The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jan. 27, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/36 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); C30B 15/04 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/6634 (2013.01); H01L 29/66136 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract
A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×10cmto 1×10cm; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.