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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957767 B1

PDFFull Text
Date of Patent:
Mar. 23, 2021

Filed:

Jan. 27, 2020

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Nico Caspary, Munich, DE;

Helmut Oefner, Zorneding, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG;

Attorney:

Design IP

Primary Examiner:

Bo B Jang

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/36 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); C30B 15/04 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/6634 (2013.01); H01L 29/66136 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract

A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×10cmto 1×10cm; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.

Find Patent Forward Citations

Caspary, Nico. (2021). Semiconductor device, silicon wafer and method of manufacturing a silicon wafer (U.S. Patent No. 10957767). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10957767

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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