The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
May. 31, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/428 (2006.01); H01L 21/321 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 29/16 (2006.01); B05D 3/04 (2006.01); C30B 25/18 (2006.01); C30B 33/12 (2006.01); C30B 31/22 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B05D 3/044 (2013.01); C30B 25/186 (2013.01); C30B 31/22 (2013.01); C30B 33/12 (2013.01); H01L 21/02074 (2013.01); H01L 21/02433 (2013.01); H01L 21/02658 (2013.01); H01L 21/265 (2013.01); H01L 21/32115 (2013.01); H01L 21/425 (2013.01); H01L 21/67075 (2013.01); H01L 29/16 (2013.01);
Abstract
A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate, the sacrificial material having a density between 35% and 120% of the density of the SiC substrate; implanting ions through the sacrificial material and into the roughened surface of the SiC substrate to form an amorphous region in the SiC substrate; and removing the sacrificial material and the amorphous region of the SiC substrate by wet etching.