The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Sep. 19, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Johannes Baumgartl, Riegersdorf, AT;
Helmut Oefner, Zorneding, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2205 (2013.01); H01L 21/0262 (2013.01); H01L 21/266 (2013.01);
Abstract
A first dose of first dopants is introduced into a semiconductor body having a first surface. A thickness of the semiconductor body is increased by forming a first semiconductor layer on the first surface of the semiconductor body. While forming the first semiconductor layer a final dose of doping in the first semiconductor layer is predominantly set by introducing at least 20% of the first dopants from the semiconductor body into the first semiconductor layer.