The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Nov. 09, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Moriz Jelinek, Villach, AT;
Johannes Georg Laven, Taufkirchen, DE;
Helmut Oefner, Zorneding, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/739 (2006.01); H01L 21/263 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 21/263 (2013.01); H01L 21/324 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 22/14 (2013.01);
Abstract
A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.