The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Mar. 26, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Johannes Freund, Deisenhofen, DE;
Thomas Wuebben, Unterschuett, AT;
Helmut Oefner, Zorneding, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); B28D 5/00 (2006.01); C30B 15/02 (2006.01); H01L 29/739 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 33/00 (2006.01); B28D 5/04 (2006.01); H01L 21/66 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); B28D 5/00 (2013.01); B28D 5/04 (2013.01); C30B 15/02 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 33/00 (2013.01); H01L 22/14 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01); H01L 22/20 (2013.01);
Abstract
One example describes a method of manufacturing Czochralski (CZ) silicon wafers. The method includes slicing an n-type CZ silicon ingot to form a plurality of CZ silicon wafers, determining a boron concentration of each CZ silicon wafer, dividing the CZ silicon wafers into sub-groups based on the boron concentration, wherein an average value of the boron concentration differs among the sub-groups, and labeling each sub-group of CZ silicon wafers with a different label which is indicative of the boron concentration.