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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10837120 B1

PDFFull Text
Date of Patent:
Nov. 17, 2020

Filed:

Mar. 26, 2020

Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Johannes Freund, Deisenhofen, DE;

Thomas Wuebben, Unterschuett, AT;

Helmut Oefner, Zorneding, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Lawrence C Tynes, Jr

Int. Cl.
CPC ...
C30B 15/04 (2006.01); B28D 5/00 (2006.01); C30B 15/02 (2006.01); H01L 29/739 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 33/00 (2006.01); B28D 5/04 (2006.01); H01L 21/66 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); B28D 5/00 (2013.01); B28D 5/04 (2013.01); C30B 15/02 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 33/00 (2013.01); H01L 22/14 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01); H01L 22/20 (2013.01);
Abstract

One example describes a method of manufacturing Czochralski (CZ) silicon wafers. The method includes slicing an n-type CZ silicon ingot to form a plurality of CZ silicon wafers, determining a boron concentration of each CZ silicon wafer, dividing the CZ silicon wafers into sub-groups based on the boron concentration, wherein an average value of the boron concentration differs among the sub-groups, and labeling each sub-group of CZ silicon wafers with a different label which is indicative of the boron concentration.

Find Patent Forward Citations

Freund, Johannes. (2020). Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device (U.S. Patent No. 10837120). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10837120

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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