The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jul. 14, 2017
Infineon Technologies Ag, Neubiberg, DE;
Helmut Oefner, Zorneding, DE;
Nico Caspary, Munich, DE;
Mohammad Momeni, Villach, AT;
Reinhard Ploss, Unterhaching, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.