Daejeon, South Korea

Hee Hwan Ji

This inventor holds 16 USPTO granted patents and 3 published patent applications. Top assignees: Magnachip Semiconductor, Inc., Sk Keyfoundry Inc., Key Foundry Co., Ltd. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hee Hwan Ji. Retrieved from https://idiyas.com/inventor/hee-hwan-ji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Cheongju-si, KR (2019 - 2020)
  • Daejeon, KR (2018 - 2024)

Company Filing History:


Years Active: 2018-2025

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16 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Hee Hwan Ji

Introduction: Hee Hwan Ji, a talented inventor hailing from Daejeon, South Korea, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Hee Hwan Ji holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: Throughout his career, Hee Hwan Ji has worked with top research institutions and leading tech companies to bring his inventions to life. His dedication to pushing the boundaries of what is possible has earned him recognition in the industry.

Collaborations: Hee Hwan Ji has collaborated with renowned engineers, scientists, and designers on various projects, fostering a culture of creativity and excellence in his work. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his inventions.

Conclusion: Hee Hwan Ji's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His impact on the world of technology is undeniable, and his legacy will undoubtedly endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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