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Cheongju, South Korea

Sk Keyfoundry Inc.

USPTO Granted Patents = 55

Trademarks = 1

Forward Citations = 4

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77 inventors (with patents filed for the assignee):

Keesik Ahn (7 out of 7 patents)

Yang Beom Kang (6 out of 13 patents)

Kang Sup Shin (5 out of 14 patents)

4. Kee Sik Ahn (5 out of 14 patents)

5. Jong Yeul Jeong (5 out of 11 patents)

6. Sung Bum Park (5 out of 14 patents)

7. Sungbum Park (5 out of 7 patents)

8. Min Kuck Cho (4 out of 13 patents)

9. Sang Geun Koo (4 out of 5 patents)

10. Jeong Ho Sheen (4 out of 4 patents)

11. Hee Hwan Ji (3 out of 16 patents)

12. Kwang Il Kim (3 out of 18 patents)

13. Seong Jun Park (3 out of 10 patents)

14. Jung Hwan Lee (3 out of 15 patents)

15. Wan-Chul Kong (3 out of 3 patents)

Core Competencies:

High Voltage

Non-Volatile Memory

Deep Trench Isolation

Schottky Barrier Diode

eFuse OTP Memory

Analog to Digital Converter

Power MOSFET

CMOS Process

Isolation Capacitor

Electrical Fuse

Bootstrap Diode

Trench Capacitor

55 patents: Sort by Forward Citations

1. 12764980 - Semiconductor device having a low resistivity trench capacitor (2026-10-13),

2. 12720850 - High voltage semiconductor device having Schottky barrier diode (2026-08-25),

3. 12635152 - Manufacturing method of a semiconductor device having high-voltage isolation capacitor (2026-05-19),

4. 12615829 - Semiconductor device with field plate structures (2026-04-28),

5. 12610794 - Semiconductor device and method having deep trench isolation (2026-04-21),

6. 12532464 - Semiconductor device including single poly non-volatile memory device and method of manufacturing same (2026-01-20),

7. 12527074 - Semiconductor device with bootstrap diode (2026-01-13),

8. 12526991 - Manufacturing method of non-volatile memory device having uniform dielectric film profile (2026-01-13),

9. 12489050 - Semiconductor device having high breakdown voltage capacitor (2025-12-02),

10. 12484259 - Non-volatile semiconductor memory device and method of manufacturing the same (2025-11-25),

11. 12464736 - Semiconductor device with digital isolator capacitor and manufacturing method thereof (2025-11-04),

12. 12457777 - Semiconductor device with deep trench isolation (2025-10-28),

13. 12456532 - eFuse OTP memory device including serial interface logic and operation method thereof (2025-10-28),

14. 12445131 - Bidirectional I/O circuit and integrated circuit including bidirectional I/O circuit (2025-10-14),

15. 12432912 - Mask-programmable read only memory with electrically isolated cells (2025-09-30),

Company Overview

Sk Keyfoundry Inc., based in Cheongju, South Korea, specializes in the development and manufacturing of advanced semiconductor devices. The company focuses on a range of core technologies including high voltage applications, non-volatile memory solutions, and deep trench isolation techniques. Additionally, Sk Keyfoundry is engaged in the production of Schottky barrier diodes, eFuse OTP memory, analog to digital converters, power MOSFETs, and CMOS processes, positioning itself as a key player in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

55 Patents

#4 in Cheongju

#301 in South Korea

#12,922 in the World

Cheongju, South Korea

Sk Keyfoundry Inc.

Forward Citations = 4

77 inventors:

Keesik Ahn (7 out of 7 patents)

Yang Beom Kang (6 out of 13 patents)

Kang Sup Shin (5 out of 14 patents)

4. Kee Sik Ahn (5 out of 14 patents)

5. Jong Yeul Jeong (5 out of 11 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Sk Keyfoundry Inc.. Retrieved from https://idiyas.com/company/sk-keyfoundry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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