The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
May. 13, 2022
SK Keyfoundry Inc., Cheongju-si, KR;
Su Jin Kim, Cheongju-si, KR;
Min Kuck Cho, Cheongju-si, KR;
Jung Hwan Lee, Cheongju-si, KR;
In Chul Jung, Daegu, KR;
SK keyfoundry Inc., Cheongju-si, KR;
Abstract
A semiconductor device includes: a logic region and a non-volatile memory (NVM) region; a logic gate insulating film disposed on a substrate in the logic region; at least one gate oxidation acceleration ion implantation layer disposed in the NVM region; at least one NVM gate insulating film disposed on the at least one gate oxidation acceleration ion implantation layer; a logic gate electrode disposed on the logic gate insulating film; and at least one NVM gate electrode disposed on the at least one NVM gate insulating film, wherein a thickness of the at least one NVM gate insulating film is equal or greater than a thickness of the logic gate insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile