The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Feb. 28, 2023
SK Keyfoundry Inc., Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Yang Beom Kang, Cheongju-si, KR;
Sang Min Han, Cheongju-si, KR;
Seong Hyun Kim, Cheongju-si, KR;
SK keyfoundry Inc., Cheongju-si, KR;
Abstract
A manufacturing method for a semiconductor device, includes: forming a first gate structure and a second gate structure on a substrate; forming a deep trench isolation (DTI) hard mask on the first and second gate structures; forming a deep trench isolation disposed between the first gate structure and the second gate structure; depositing a first undoped oxide layer in the deep trench isolation; performing a first etch-back process on the first undoped oxide layer to remove a portion of the undoped oxide layer; depositing a first deep trench isolation (DTI) gap-fill layer on a remaining portion of the undoped oxide layer, and performing a second etch-back process on the first DTI gap-fill layer; depositing a second DTI gap-fill layer to seal the deep trench isolation, and forming a planarized second DTI gap-fill layer by a planarization process; and depositing a second undoped layer on the planarized second DTI gap-fill layer.